
Discrete Semiconductor Products
PMDPB55XP,115
ActiveNexperia USA Inc.
20 V, DUAL P-CHANNEL TRENCH MOSFET
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Discrete Semiconductor Products
PMDPB55XP,115
ActiveNexperia USA Inc.
20 V, DUAL P-CHANNEL TRENCH MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PMDPB55XP,115 |
|---|---|
| Configuration | 2 P-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 3.4 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 25 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 785 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-UFDFN Exposed Pad |
| Power - Max [Max] | 490 mW |
| Rds On (Max) @ Id, Vgs | 70 mOhm |
| Supplier Device Package | 6-HUSON (2x2) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 900 mV |
PMDPB55 Series
20 V, dual P-channel Trench MOSFET
| Part | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Vgs(th) (Max) @ Id | Technology | Rds On (Max) @ Id, Vgs | Configuration | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | FET Feature | Current - Continuous Drain (Id) @ 25°C | Power - Max [Max] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 6-UFDFN Exposed Pad | 25 nC | 6-HUSON (2x2) | 900 mV | MOSFET (Metal Oxide) | 70 mOhm | 2 P-Channel (Dual) | 785 pF | Surface Mount | 150 °C | -55 °C | Logic Level Gate | 3.4 A | 490 mW | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.47 | |
| 10 | $ 0.40 | |||
| 100 | $ 0.28 | |||
| 500 | $ 0.22 | |||
| 1000 | $ 0.18 | |||
| Digi-Reel® | 1 | $ 0.47 | ||
| 10 | $ 0.40 | |||
| 100 | $ 0.28 | |||
| 500 | $ 0.22 | |||
| 1000 | $ 0.18 | |||
| N/A | 1103 | $ 0.95 | ||
| Tape & Reel (TR) | 3000 | $ 0.16 | ||
| 6000 | $ 0.15 | |||
| 9000 | $ 0.14 | |||
| 30000 | $ 0.14 | |||
Description
General part information
PMDPB55 Series
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources