Discrete Semiconductor Products

PMDPB55XP,115

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PMDPB55XP - 20 V, DUAL P-CHANNEL TRENCH MOSFET@EN-US DFN 6-PIN

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Discrete Semiconductor Products

Active

PMDPB55XP - 20 V, DUAL P-CHANNEL TRENCH MOSFET@EN-US DFN 6-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	PMDPB55XP,115

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	3.4 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds	785 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UFDFN Exposed Pad
Power - Max [Max]	490 mW
Rds On (Max) @ Id, Vgs	70 mOhm
Supplier Device Package	6-HUSON (2x2)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	900 mV

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Configuration	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Mounting Type	FET Feature	Technology	Power - Max [Max]
Freescale Semiconductor - NXP PMDPB55XP,115	-55 °C	150 °C	6-HUSON (2x2)	2 P-Channel	900 mV	3.4 A	20 V	6-UFDFN Exposed Pad	785 pF	25 nC	70 mOhm	Surface Mount	Logic Level Gate	MOSFET (Metal Oxide)	490 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 20V 3.4A 490mW Surface Mount 6-HUSON (2x2)

Technical documentation and resources