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SOT1118
Discrete Semiconductor Products

PMDPB55XP,115

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Nexperia USA Inc.

20 V, DUAL P-CHANNEL TRENCH MOSFET

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SOT1118
Discrete Semiconductor Products

PMDPB55XP,115

Active
Nexperia USA Inc.

20 V, DUAL P-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPMDPB55XP,115
Configuration2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C3.4 A
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]785 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-UFDFN Exposed Pad
Power - Max [Max]490 mW
Rds On (Max) @ Id, Vgs70 mOhm
Supplier Device Package6-HUSON (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id900 mV

PMDPB55 Series

20 V, dual P-channel Trench MOSFET

PartPackage / CaseGate Charge (Qg) (Max) @ Vgs [Max]Supplier Device PackageVgs(th) (Max) @ IdTechnologyRds On (Max) @ Id, VgsConfigurationInput Capacitance (Ciss) (Max) @ Vds [Max]Mounting TypeOperating Temperature [Max]Operating Temperature [Min]FET FeatureCurrent - Continuous Drain (Id) @ 25°CPower - Max [Max]Drain to Source Voltage (Vdss)
SOT1118
Nexperia USA Inc.
6-UFDFN Exposed Pad
25 nC
6-HUSON (2x2)
900 mV
MOSFET (Metal Oxide)
70 mOhm
2 P-Channel (Dual)
785 pF
Surface Mount
150 °C
-55 °C
Logic Level Gate
3.4 A
490 mW
20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.47
10$ 0.40
100$ 0.28
500$ 0.22
1000$ 0.18
Digi-Reel® 1$ 0.47
10$ 0.40
100$ 0.28
500$ 0.22
1000$ 0.18
N/A 1103$ 0.95
Tape & Reel (TR) 3000$ 0.16
6000$ 0.15
9000$ 0.14
30000$ 0.14

Description

General part information

PMDPB55 Series

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.