Discrete Semiconductor Products

SIRA88BDP-T1-GE3

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MOSFET N-CH 30V 19A/40A PPAK SO8

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Discrete Semiconductor Products

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MOSFET N-CH 30V 19A/40A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SIRA88BDP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	40 A, 19 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	680 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	17 W, 3.8 W
Rds On (Max) @ Id, Vgs	6.83 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SIRA88BDP-T1-GE3	19 nC	30 V	Surface Mount	3.8 W 17 W	-16 V 20 V	6.83 mOhm	MOSFET (Metal Oxide)	680 pF	PowerPAK® SO-8	-55 °C	150 °C	N-Channel	19 A 40 A	PowerPAK® SO-8	2.4 V	4.5 V 10 V

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General part information

N-Channel 30 V 19A (Ta), 40A (Tc) 3.8W (Ta), 17W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources