SIRA88 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 19A/40A PPAK SO8
| Part | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Mounting Type | Power Dissipation (Max) | Vgs (Max) | Rds On (Max) @ Id, Vgs | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 19 nC | 30 V | Surface Mount | 3.8 W 17 W | -16 V 20 V | 6.83 mOhm | MOSFET (Metal Oxide) | 680 pF | PowerPAK® SO-8 | -55 °C | 150 °C | N-Channel | 19 A 40 A | PowerPAK® SO-8 | 2.4 V | 4.5 V 10 V |