Discrete Semiconductor Products

STW23NM50N

Obsolete

MOSFET N-CH 500V 17A TO247-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 500V 17A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	STW23NM50N

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	45 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1330 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id	Technology	Package / Case
STMicroelectronics STW23NM60N	150 W	Through Hole	2050 pF	19 A	10 V	600 V	150 °C	25 V	TO-247-3	60 nC	180 mOhm	N-Channel	4 V	MOSFET (Metal Oxide)	TO-247-3
STMicroelectronics STW23NM60ND	150 W	Through Hole	2050 pF	19.5 A	10 V	600 V	150 °C	25 V	TO-247-3	70 nC	180 mOhm	N-Channel	5 V	MOSFET (Metal Oxide)	TO-247-3
STMicroelectronics STW23NM50N	125 W	Through Hole	1330 pF	17 A	10 V	500 V	150 °C	25 V	TO-247-3	45 nC	190 mOhm	N-Channel	4 V	MOSFET (Metal Oxide)	TO-247-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.57

General part information

N-Channel 500 V 17A (Tc) 125W (Tc) Through Hole TO-247-3

Technical documentation and resources