Specification	HUF76633P3-F085

Current - Continuous Drain (Id) @ 25°C	39 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1820 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	145 W
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	3 V

HUF76633P3_F085 Series

N-Channel Logic Level UltraFET® Power MOSFET 100V, 38A, 36mΩ

Part	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	FET Type	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Power - Max [Max]	Package / Case [y]	Package / Case [x]	Configuration	FET Feature
ON Semiconductor HUF76437S3ST	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.5 V 10 V	TO-263 (D2PAK)	14 mOhm	16 V	3 V	Surface Mount	-55 °C	175 ░C	2230 pF	60 V	71 A	71 nC	155 W	N-Channel
ON Semiconductor HUF76429S3S	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.5 V 10 V	TO-263 (D2PAK)		16 V	3 V	Surface Mount	-55 °C	175 ░C	1480 pF	60 V	47 A			N-Channel	110 W	46 nC	22 mOhm
ON Semiconductor HUF76633S3ST	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.5 V 10 V	TO-263 (D2PAK)	35 mOhm	16 V	3 V	Surface Mount	-55 °C	175 ░C	1820 pF	100 V	39 A			N-Channel	145 W
ON Semiconductor HUF76419D3	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA	4.5 V 10 V	IPAK	37 mOhm	16 V	3 V	Through Hole	-55 °C	175 ░C	900 pF	60 V	20 A	27.5 nC	75 W	N-Channel
ON Semiconductor HUF76609D3S	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V	TO-252AA	160 mOhm	16 V	3 V	Surface Mount	-55 °C	175 ░C	425 pF	100 V	10 A	16 nC	49 W	N-Channel
ON Semiconductor HUF76633P3-F085	MOSFET (Metal Oxide)	TO-220-3	4.5 V 10 V	TO-220-3	35 mOhm	16 V	3 V	Through Hole	-55 °C	175 ░C	1820 pF	100 V	39 A			N-Channel	145 W
ON Semiconductor HUF76429D3ST	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V	TO-252AA	23 mOhm	16 V	3 V	Surface Mount	-55 °C	175 ░C	1480 pF	60 V	20 A			N-Channel	110 W	46 nC
ON Semiconductor HUF76645S3S	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.5 V 10 V	TO-263 (D2PAK)	14 mOhm	16 V	3 V	Surface Mount	-55 °C	175 ░C	4400 pF	100 V	75 A	153 nC		N-Channel	310 W
ON Semiconductor HUF76407DK8T	MOSFET (Metal Oxide)	8-SOIC		8-SOIC	90 mOhm		3 V	Surface Mount	-55 °C	150 °C	330 pF	60 V						11.2 nC		2.5 W	3.9 mm	0.154 in	2 N-Channel (Dual)	Logic Level Gate
ON Semiconductor HUF76437S3S	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.5 V 10 V	TO-263 (D2PAK)	14 mOhm	16 V	3 V	Surface Mount	-55 °C	175 ░C	2230 pF	60 V	71 A	71 nC	155 W	N-Channel