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IRG4RC10UTRPBF
Discrete Semiconductor Products

HUF76633S3ST

Obsolete
ON Semiconductor

MOSFET N-CH 100V 39A D2PAK

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IRG4RC10UTRPBF
Discrete Semiconductor Products

HUF76633S3ST

Obsolete
ON Semiconductor

MOSFET N-CH 100V 39A D2PAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationHUF76633S3ST
Current - Continuous Drain (Id) @ 25°C39 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds1820 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]145 W
Rds On (Max) @ Id, Vgs35 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max) @ Id3 V

HUF76633P3_F085 Series

N-Channel Logic Level UltraFET<sup>®</sup> Power MOSFET 100V, 38A, 36mΩ

PartTechnologyPackage / CaseDrive Voltage (Max Rds On, Min Rds On)Supplier Device PackageRds On (Max) @ Id, VgsVgs (Max)Vgs(th) (Max) @ IdMounting TypeOperating Temperature [Min]Operating Temperature [Max]Input Capacitance (Ciss) (Max) @ VdsDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ Vgs [Max]Power Dissipation (Max)FET TypePower Dissipation (Max) [Max]Gate Charge (Qg) (Max) @ VgsRds On (Max) @ Id, Vgs [Max]Power - Max [Max]Package / Case [y]Package / Case [x]ConfigurationFET Feature
IRG4RC10UTRPBF
ON Semiconductor
HUF76437S3ST
MOSFET (Metal Oxide)
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
4.5 V
10 V
TO-263 (D2PAK)
14 mOhm
16 V
3 V
Surface Mount
-55 °C
175 ░C
2230 pF
60 V
71 A
71 nC
155 W
N-Channel
TO-263
ON Semiconductor
HUF76429S3S
MOSFET (Metal Oxide)
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
4.5 V
10 V
TO-263 (D2PAK)
16 V
3 V
Surface Mount
-55 °C
175 ░C
1480 pF
60 V
47 A
N-Channel
110 W
46 nC
22 mOhm
IRG4RC10UTRPBF
ON Semiconductor
HUF76633S3ST
MOSFET (Metal Oxide)
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
4.5 V
10 V
TO-263 (D2PAK)
35 mOhm
16 V
3 V
Surface Mount
-55 °C
175 ░C
1820 pF
100 V
39 A
N-Channel
145 W
I-PAK
ON Semiconductor
HUF76419D3
MOSFET (Metal Oxide)
IPAK
TO-251-3 Short Leads
TO-251AA
4.5 V
10 V
IPAK
37 mOhm
16 V
3 V
Through Hole
-55 °C
175 ░C
900 pF
60 V
20 A
27.5 nC
75 W
N-Channel
TO-252AA
ON Semiconductor
HUF76609D3S
MOSFET (Metal Oxide)
DPAK (2 Leads + Tab)
SC-63
TO-252-3
4.5 V
10 V
TO-252AA
160 mOhm
16 V
3 V
Surface Mount
-55 °C
175 ░C
425 pF
100 V
10 A
16 nC
49 W
N-Channel
TO-220-3
ON Semiconductor
HUF76633P3-F085
MOSFET (Metal Oxide)
TO-220-3
4.5 V
10 V
TO-220-3
35 mOhm
16 V
3 V
Through Hole
-55 °C
175 ░C
1820 pF
100 V
39 A
N-Channel
145 W
TO-252AA
ON Semiconductor
HUF76429D3ST
MOSFET (Metal Oxide)
DPAK (2 Leads + Tab)
SC-63
TO-252-3
4.5 V
10 V
TO-252AA
23 mOhm
16 V
3 V
Surface Mount
-55 °C
175 ░C
1480 pF
60 V
20 A
N-Channel
110 W
46 nC
TO-263
ON Semiconductor
HUF76645S3S
MOSFET (Metal Oxide)
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
4.5 V
10 V
TO-263 (D2PAK)
14 mOhm
16 V
3 V
Surface Mount
-55 °C
175 ░C
4400 pF
100 V
75 A
153 nC
N-Channel
310 W
8-SOIC
ON Semiconductor
HUF76407DK8T
MOSFET (Metal Oxide)
8-SOIC
8-SOIC
90 mOhm
3 V
Surface Mount
-55 °C
150 °C
330 pF
60 V
11.2 nC
2.5 W
3.9 mm
0.154 in
2 N-Channel (Dual)
Logic Level Gate
TO-263
ON Semiconductor
HUF76437S3S
MOSFET (Metal Oxide)
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
4.5 V
10 V
TO-263 (D2PAK)
14 mOhm
16 V
3 V
Surface Mount
-55 °C
175 ░C
2230 pF
60 V
71 A
71 nC
155 W
N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 606$ 0.50
606$ 0.50

Description

General part information

HUF76633P3_F085 Series

N-Channel Logic Level UltraFET®Power MOSFET 100 V, 38 A, 36 mΩ

Documents

Technical documentation and resources

Datasheet

Datasheet