Specification	NTF3055L108T1G

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds	440 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	1.3 W
Rds On (Max) @ Id, Vgs	120 mOhm
Supplier Device Package	SOT-223 (TO-261)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2 V

NTF3055L108 Series

Single N-Channel Logic Level Power MOSFET 60V, 3A, 120mΩ

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs (Max)	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification
ON Semiconductor NTF3055L108T1G	SOT-223 (TO-261)	2 V	MOSFET (Metal Oxide)	440 pF	120 mOhm	15 V	Surface Mount	TO-261-4 TO-261AA	15 nC	60 V	N-Channel	5 V	3 A	-55 °C	175 ░C	1.3 W
ON Semiconductor NTF3055-100T1G-IRH1	SOT-223 (TO-261)	4 V	MOSFET (Metal Oxide)	455 pF	110 mOhm	20 V	Surface Mount	TO-261-4 TO-261AA		60 V	N-Channel	10 V	3 A	-55 °C	175 ░C	1.3 W	Automotive	22 nC	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.

Technical documentation and resources