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SOT-223 (TO-261)
Discrete Semiconductor Products

NTF3055-100T1G-IRH1

Obsolete
ON Semiconductor

MOSFET N-CH 60V 3A SOT223

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SOT-223 (TO-261)
Discrete Semiconductor Products

NTF3055-100T1G-IRH1

Obsolete
ON Semiconductor

MOSFET N-CH 60V 3A SOT223

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNTF3055-100T1G-IRH1
Current - Continuous Drain (Id) @ 25°C3 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]22 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds455 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-261AA, TO-261-4
Power Dissipation (Max)1.3 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs110 mOhm
Supplier Device PackageSOT-223 (TO-261)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

NTF3055L108 Series

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.

Documents

Technical documentation and resources

No documents available