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PowerPAK 1212-8
Discrete Semiconductor Products

SI7322DN-T1-E3

LTB
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 18A PPAK 1212-8

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DocumentsDatasheet
PowerPAK 1212-8
Discrete Semiconductor Products

SI7322DN-T1-E3

LTB
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 18A PPAK 1212-8

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSI7322DN-T1-E3
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [x]20 nC
Input Capacitance (Ciss) (Max) @ Vds750 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CasePowerPAK® 1212-8
Power Dissipation (Max)52 W, 3.8 W
Rds On (Max) @ Id, Vgs58 mOhm
Supplier Device PackagePowerPAK® 1212-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]4.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.65
10$ 1.35
100$ 1.05
500$ 0.89
1000$ 0.72
Digi-Reel® 1$ 1.65
10$ 1.35
100$ 1.05
500$ 0.89
1000$ 0.72
Tape & Reel (TR) 3000$ 0.68
6000$ 0.65
9000$ 0.62

Description

General part information

SI7322 Series

N-Channel 100 V 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Documents

Technical documentation and resources