SI7322 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 100V 15.1A PPAK
| Part | Vgs(th) (Max) @ Id | FET Type | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Rds On (Max) @ Id, Vgs [Max] | Supplier Device Package | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Technology | Drain to Source Voltage (Vdss) | Package / Case | Gate Charge (Qg) (Max) @ Vgs [x] | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 4 V | N-Channel | Surface Mount | 15.1 A | 10 V | -55 °C | 150 °C | 20 V | 57 mOhm | PowerPAK® 1212-8 | 26 W | 13 nC | 360 pF | MOSFET (Metal Oxide) | 100 V | PowerPAK® 1212-8 | |||
Vishay General Semiconductor - Diodes Division | N-Channel | Surface Mount | 18 A | 10 V | -55 °C | 150 °C | 20 V | PowerPAK® 1212-8 | 3.8 W 52 W | 750 pF | MOSFET (Metal Oxide) | 100 V | PowerPAK® 1212-8 | 20 nC | 58 mOhm | 4.4 V | |||
Vishay General Semiconductor - Diodes Division | N-Channel | Surface Mount | 10 V | -55 °C | 150 °C | 20 V | PowerPAK® 1212-8 | 3.8 W 52 W | 750 pF | MOSFET (Metal Oxide) | 100 V | PowerPAK® 1212-8 | 20 nC | 58 mOhm | 4.4 V |