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STFU24N60M2
Discrete Semiconductor Products

STFU24N60M2

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STMicroelectronics

N-CHANNEL 600 V, 0.168 OHM TYP., 18 A MDMESH M2 POWER MOSFET IN TO-220FP ULTRA NARROW LEADS PACKAGE

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STFU24N60M2
Discrete Semiconductor Products

STFU24N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.168 OHM TYP., 18 A MDMESH M2 POWER MOSFET IN TO-220FP ULTRA NARROW LEADS PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTFU24N60M2
Current - Continuous Drain (Id) @ 25°C18 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]29 nC
Input Capacitance (Ciss) (Max) @ Vds1060 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Rds On (Max) @ Id, Vgs190 mOhm
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 989$ 3.13

Description

General part information

STFU24N60M2 Series

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.