Discrete Semiconductor Products

2SK3313(Q)

Obsolete

MOSFET N-CH 500V 12A TO220NIS

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 500V 12A TO220NIS

Technical Specifications

Parameters and characteristics for this part

Specification	2SK3313(Q)

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	45 nC
Input Capacitance (Ciss) (Max) @ Vds	2040 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	620 mOhm
Supplier Device Package	TO-220NIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	FET Type	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Toshiba Semiconductor and Storage 2SK3313(Q)	TO-220NIS	30 V	12 A	MOSFET (Metal Oxide)	620 mOhm	10 V	40 W	N-Channel	TO-220-3 Full Pack	500 V	150 °C	Through Hole	45 nC	2040 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.87

General part information

N-Channel 500 V 12A (Ta) 40W (Tc) Through Hole TO-220NIS

Technical documentation and resources