2SK3313 Series
Manufacturer: Toshiba Semiconductor and Storage
MOSFET N-CH 500V 12A TO220NIS
| Part | Supplier Device Package | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Technology | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | FET Type | Package / Case | Drain to Source Voltage (Vdss) | Operating Temperature | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | TO-220NIS | 30 V | 12 A | MOSFET (Metal Oxide) | 620 mOhm | 10 V | 40 W | N-Channel | TO-220-3 Full Pack | 500 V | 150 °C | Through Hole | 45 nC | 2040 pF |