Discrete Semiconductor Products

SCTWA90N65G2V-4

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STMicroelectronics

SILICON CARBIDE POWER MOSFET 650 V, 18 MOHM TYP., 119 A IN AN HIP247-4 PACKAGE

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Discrete Semiconductor Products

SCTWA90N65G2V-4

Active

STMicroelectronics

SILICON CARBIDE POWER MOSFET 650 V, 18 MOHM TYP., 119 A IN AN HIP247-4 PACKAGE

Deep-Dive with AI

DocumentsDatasheet Datasheet +26

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCTWA90N65G2V-4

Current - Continuous Drain (Id) @ 25°C	119 A
Drain to Source Voltage (Vdss)	650 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	157 nC
Input Capacitance (Ciss) (Max) @ Vds	3380 pF
Mounting Type	Through Hole
Operating Temperature [Max]	200 C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	565 W
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	HiP247™ Long Leads
Vgs (Max) [Max]	22 V
Vgs (Max) [Min]	-10 V

SCTWA90N65G2V-4 Series

Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max) [Min]	Vgs (Max) [Max]	Drain to Source Voltage (Vdss)
STMicroelectronics SCTWA90N65G2V-4	TO-247-3	3380 pF	119 A	N-Channel	HiP247™ Long Leads	565 W	Through Hole	157 nC	-55 °C	200 C	24 mOhm	-10 V	22 V	650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	600	$ 23.25
Newark	Each	1	$ 36.53
		5	$ 35.64
		10	$ 34.78
		25	$ 34.01
		50	$ 33.55
		100	$ 33.54

Description

General part information

SCTWA90N65G2V-4 Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.