Discrete Semiconductor Products
SCTWA90N65G2V-4
ActiveSTMicroelectronics
SILICON CARBIDE POWER MOSFET 650 V, 18 MOHM TYP., 119 A IN AN HIP247-4 PACKAGE
Discrete Semiconductor Products
SCTWA90N65G2V-4
ActiveSTMicroelectronics
SILICON CARBIDE POWER MOSFET 650 V, 18 MOHM TYP., 119 A IN AN HIP247-4 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | SCTWA90N65G2V-4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 119 A |
| Drain to Source Voltage (Vdss) | 650 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 157 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3380 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 200 °C |
| Operating Temperature [Min] | -55 ░C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 565 W |
| Rds On (Max) @ Id, Vgs | 24 mOhm |
| Supplier Device Package | HiP247™ Long Leads |
| Vgs (Max) [Max] | 22 V |
| Vgs (Max) [Min] | -10 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCTWA90 Series
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Documents
Technical documentation and resources