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Technical Specifications
Parameters and characteristics for this part
| Specification | UM4001B |
|---|---|
| Capacitance @ Vr, F | 3 pF |
| Diode Type | PIN - Single |
| Package / Case | Axial |
| Power Dissipation (Max) [Max] | 12 W |
| Resistance @ If, F | 500 mOhm |
| Supplier Device Package | Axial |
| Voltage - Peak Reverse (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | N/A | 1 | $ 19.22 | |
| 50 | $ 18.44 | |||
| 100 | $ 17.35 | |||
| 250 | $ 16.56 | |||
| 500 | $ 15.93 | |||
| 1000 | $ 15.62 | |||
Description
General part information
UMX4000-S-Band-LowDistortion-PIN Series
The UM4000 series features high power PIN diodes with long carrier lifetimes and thick I-regions. They are especially suitable for use in low distortion switches and attenuators, in HF through S band frequencies. While both series are electrically equivalent, the UM4900 series have higher power ratings due to a shorter thermal path between the chip and package. High charge storage and long carrier lifetime enable high RF levels to be controlled with relatively low bias current. Similarly, peak RF voltages can be handled well in excess of applied reverse bias voltage.
Documents
Technical documentation and resources