FDMC86160ET100
ActiveN-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 100V, 43A, 14MΩ
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FDMC86160ET100
ActiveN-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 100V, 43A, 14MΩ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMC86160ET100 |
|---|---|
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 22 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1290 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerWDFN |
| Power Dissipation (Max) | 65 W, 2.8 W |
| Rds On (Max) @ Id, Vgs | 14 mOhm |
| Supplier Device Package | Power33 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.27 | |
| 10 | $ 2.13 | |||
| 100 | $ 1.48 | |||
| 500 | $ 1.21 | |||
| 1000 | $ 1.12 | |||
| Digi-Reel® | 1 | $ 3.27 | ||
| 10 | $ 2.13 | |||
| 100 | $ 1.48 | |||
| 500 | $ 1.21 | |||
| 1000 | $ 1.12 | |||
| Tape & Reel (TR) | 3000 | $ 1.07 | ||
| Newark | Each (Supplied on Full Reel) | 3000 | $ 1.35 | |
| 6000 | $ 1.28 | |||
| 12000 | $ 1.15 | |||
| 18000 | $ 1.11 | |||
| 30000 | $ 1.07 | |||
| ON Semiconductor | N/A | 1 | $ 0.98 | |
Description
General part information
FDMC86160ET100 Series
This N-Channel MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance. This device is well suited for applications where ultra low RDS(on)is required in small spaces such as High performance VRM, POL and orring functions.
Documents
Technical documentation and resources