DN2625K4-G
ActiveTRANSISTOR: N-MOSFET; UNIPOLAR; 250V; 1.1A; IDM: 3.3A; 2.5W; TO252
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DN2625K4-G
ActiveTRANSISTOR: N-MOSFET; UNIPOLAR; 250V; 1.1A; IDM: 3.3A; 2.5W; TO252
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Technical Specifications
Parameters and characteristics for this part
| Specification | DN2625K4-G |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.1 A |
| Drain to Source Voltage (Vdss) | 250 V |
| Drive Voltage (Max Rds On, Min Rds On) | 0 V |
| FET Feature | Depletion Mode |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 7.04 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Rds On (Max) @ Id, Vgs | 3.5 Ohm |
| Supplier Device Package | TO-252 (DPAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.63 | |
| 25 | $ 1.36 | |||
| 100 | $ 1.25 | |||
| Digi-Reel® | 1 | $ 1.63 | ||
| 25 | $ 1.36 | |||
| 100 | $ 1.25 | |||
| Tape & Reel (TR) | 2000 | $ 1.25 | ||
| Microchip Direct | T/R | 1 | $ 1.63 | |
| 25 | $ 1.36 | |||
| 100 | $ 1.25 | |||
| 1000 | $ 1.19 | |||
| 5000 | $ 1.17 | |||
| Newark | Each (Supplied on Full Reel) | 2000 | $ 1.29 | |
| TME | N/A | 1 | $ 1.95 | |
| 3 | $ 1.78 | |||
| 10 | $ 1.64 | |||
| 100 | $ 1.49 | |||
Description
General part information
DN2625 Series
DN2625 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. The DN2625DK6-G contains two MOSFETs in an 8-lead, dual pad DFN package. The DN2625K6-G in the 14-lead QFN package is not recommended for new designs, but may continue to be purchased for existing designs.
