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TO-252AA
Discrete Semiconductor Products

FCD850N80Z

NRND
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> II, 800 V, 6 A, 850 MΩ, DPAK

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TO-252AA
Discrete Semiconductor Products

FCD850N80Z

NRND
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> II, 800 V, 6 A, 850 MΩ, DPAK

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFCD850N80Z
Current - Continuous Drain (Id) @ 25°C6 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs29 nC
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)75 W
Rds On (Max) @ Id, Vgs850 mOhm
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.15
10$ 2.05
100$ 1.42
500$ 1.15
1000$ 1.07
Tape & Reel (TR) 2500$ 1.01
NewarkEach (Supplied on Cut Tape) 1$ 2.71
10$ 2.16
25$ 2.07
ON SemiconductorN/A 1$ 0.93

Description

General part information

FCD850N80Z Series

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.