FCD850N80Z Series

Power MOSFET, N-Channel, SUPERFET® II, 800 V, 6 A, 850 mΩ, DPAK

Catalog

Power MOSFET, N-Channel, SUPERFET® II, 800 V, 6 A, 850 mΩ, DPAK

Part	Mounting Type	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs(th) (Max) @ Id [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FCD850N80Z	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	29 nC	6 A	850 mOhm	75 W	4.5 V	10 V	800 V	TO-252AA	20 V	N-Channel	-55 °C	150 °C

Catalog

Power MOSFET, N-Channel, SUPERFET® II, 800 V, 6 A, 850 mΩ, DPAK

Key Features

• Typ. RDS(on)= 710 mΩ(Typ.)

• Ultra Low Gate Charge (Typ. Qg= 22 nC)

• Low Eoss(Typ. 2.3 uJ @ 400V)

• Low Effective Output Capacitance (Typ. Coss(eff.)= 106 pF)

• 100% Avalanche Tested

• RoHS Compliant

• ESD Improved Capability

Description

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.