Specification	JAN2N5796A

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Grade	Military
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-65 °C
Package / Case	TO-78-6 Metal Can
Power - Max [Max]	600 mW
Qualification	MIL-PRF-19500/496
Supplier Device Package	TO-78-6
Transistor Type	2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic	1.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

JANTXV2N5796A-Dual-Transistor Series

PNP Silicon Dual -60V, -0.6A

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Power - Max [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Grade	Qualification
Microchip Technology 2N5796A	100	TO-78-6	175 ░C	-65 °C	600 mA	60 V	10 µA	Through Hole	600 mW	TO-78-6 Metal Can	1.6 V	2 PNP (Dual)
Microchip Technology JANS2N5796U/TR	100	U	175 ░C	-65 °C	600 mA	60 V	10 µA	Surface Mount	600 mW	6-SMD No Lead	1.6 V	2 PNP (Dual)	Military	MIL-PRF-19500/496
Microchip Technology JAN2N5796	100	TO-78-6	175 ░C	-65 °C	600 mA	60 V	10 µA	Through Hole	600 mW	TO-78-6 Metal Can	1.6 V	2 PNP (Dual)	Military	MIL-PRF-19500/496
Microchip Technology JANTXV2N5796U/TR	100	6-SMD	175 ░C	-65 °C	600 mA	60 V	10 µA	Surface Mount	600 mW	6-SMD No Lead	1.6 V	2 PNP (Dual)	Military	MIL-PRF-19500/496
Microchip Technology JANS2N5796	100	TO-78-6	175 ░C	-65 °C	600 mA	60 V	10 µA	Through Hole	600 mW	TO-78-6 Metal Can	1.6 V	2 PNP (Dual)	Military	MIL-PRF-19500/496
Microchip Technology JANTXV2N5796A	100	TO-78-6	175 ░C	-65 °C	600 mA	60 V	10 µA	Through Hole	600 mW	TO-78-6 Metal Can	1.6 V	2 PNP (Dual)	Military	MIL-PRF-19500/496
Microchip Technology JANTX2N5796A	100	TO-78-6	175 ░C	-65 °C	600 mA	60 V	10 µA	Through Hole	600 mW	TO-78-6 Metal Can	1.6 V	2 PNP (Dual)	Military	MIL-PRF-19500/496
Microchip Technology JAN2N5796A	100	TO-78-6	175 ░C	-65 °C	600 mA	60 V	10 µA	Through Hole	600 mW	TO-78-6 Metal Can	1.6 V	2 PNP (Dual)	Military	MIL-PRF-19500/496
Microchip Technology JANS2N5796U	100	6-SMD	175 ░C	-65 °C	600 mA	60 V	10 µA	Surface Mount	600 mW	6-SMD No Lead	1.6 V	2 PNP (Dual)	Military	MIL-PRF-19500/496
Microchip Technology 2N5796AU/TR	100	U	175 ░C	-65 °C	600 mA	60 V	10 µA	Surface Mount	600 mW	6-SMD No Lead	1.6 V	2 PNP (Dual)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	50	$ 105.12
Microchip Direct	N/A	1	$ 105.12
Newark	Each	1	$ 105.12
		100	$ 97.61
		500	$ 93.86

Description

General part information

JANTXV2N5796A-Dual-Transistor Series

This specification covers the performance requirements for two electrically isolated, PNP silicon, 2N5795 and 2N5796 unitized, dual 2N2907A transistors as one dual unit for high speed saturated switching applications. Both matched and unmatched types are covered. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/496. Provisions for radiation hardness assurance (RHA) are provided for JANTXV and JANS product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet

2N5795 2N7596 and 2N7596U

Data Sheets