STB24N60M6
ActiveN-CHANNEL 600 V, 162 MOHM TYP., 17 A MDMESH M6 POWER MOSFET IN A D2PAK PACKAGE
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STB24N60M6
ActiveN-CHANNEL 600 V, 162 MOHM TYP., 17 A MDMESH M6 POWER MOSFET IN A D2PAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STB24N60M6 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 17 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 960 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 130 W |
| Rds On (Max) @ Id, Vgs | 190 mOhm |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STB24 Series
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
Documents
Technical documentation and resources
