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ONSEMI BZX79C6V2-T50R
Discrete Semiconductor Products

EGP10K

Active
ON Semiconductor

FAST / ULTRAFAST DIODE, 800 V, 1 A, SINGLE, 1.7 V, 75 NS, 30 A

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ONSEMI BZX79C6V2-T50R
Discrete Semiconductor Products

EGP10K

Active
ON Semiconductor

FAST / ULTRAFAST DIODE, 800 V, 1 A, SINGLE, 1.7 V, 75 NS, 30 A

Technical Specifications

Parameters and characteristics for this part

SpecificationEGP10K
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr5 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-65 C
Package / CaseDO-204AL, DO-41, Axial
Reverse Recovery Time (trr)75 ns
Speed200 mA, 500 ns
Supplier Device PackageDO-204AL (DO-41)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]800 V
Voltage - Forward (Vf) (Max) @ If1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 2616$ 0.11
2616$ 0.11
Cut Tape (CT) 1$ 0.47
1$ 0.47
10$ 0.36
10$ 0.36
100$ 0.22
100$ 0.22
500$ 0.20
500$ 0.20
1000$ 0.14
1000$ 0.14
2000$ 0.13
2000$ 0.13
Tape & Reel (TR) 5000$ 0.12
5000$ 0.12
10000$ 0.11
10000$ 0.11
25000$ 0.11
25000$ 0.11
50000$ 0.10
50000$ 0.10
NewarkEach (Supplied on Full Reel) 3000$ 0.16
6000$ 0.14
12000$ 0.12
18000$ 0.11
30000$ 0.10
ON SemiconductorN/A 1$ 0.11

Description

General part information

EGP10G Series

1.0A Ultra Fast Recovery Rectifier