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1N4001
Discrete Semiconductor Products

EGP10B

Active
ON Semiconductor

FAST / ULTRAFAST DIODE, 100 V, 1 A, SINGLE, 950 MV, 50 NS, 30 A

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1N4001
Discrete Semiconductor Products

EGP10B

Active
ON Semiconductor

FAST / ULTRAFAST DIODE, 100 V, 1 A, SINGLE, 950 MV, 50 NS, 30 A

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationEGP10B
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr5 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-65 C
Package / CaseDO-204AL, DO-41, Axial
Reverse Recovery Time (trr)50 ns
Speed200 mA, 500 ns
Supplier Device PackageDO-204AL (DO-41)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]100 V
Voltage - Forward (Vf) (Max) @ If950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 2348$ 0.13
NewarkEach (Supplied on Full Reel) 3000$ 0.18
6000$ 0.15
12000$ 0.14
18000$ 0.13
30000$ 0.12
ON SemiconductorN/A 1$ 0.12

Description

General part information

EGP10G Series

1.0A Ultra Fast Recovery Rectifier