Specification	SSM3J371R,LXHF

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	10.4 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	630 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max)	1 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	55 mOhm
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	6 V, -8 V
Vgs(th) (Max) @ Id	1 V

SSM3J371R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -4.0 A, 0.055 Ω@4.5V, SOT-23F

Part	Current - Continuous Drain (Id) @ 25°C	Qualification	Grade	FET Type	Vgs (Max) [Max]	Mounting Type	Supplier Device Package	Package / Case	Operating Temperature	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Toshiba Semiconductor and Storage SSM3J371R,LXHF	4 A	AEC-Q101	Automotive	P-Channel	-8 V 6 V	Surface Mount	SOT-23F	SOT-23-3 Flat Leads	150 °C	MOSFET (Metal Oxide)	1 W	10.4 nC	20 V	1 V	1.5 V 4.5 V	55 mOhm	630 pF
Toshiba Semiconductor and Storage SSM3J371R,LF	4 A			P-Channel	-8 V 6 V	Surface Mount	SOT-23F	SOT-23-3 Flat Leads	150 °C	MOSFET (Metal Oxide)	1 W	10.4 nC	20 V	1 V	1.5 V 4.5 V	55 mOhm	630 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -4.0 A, 0.055 Ω@4.5V, SOT-23F

Technical documentation and resources