High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -4.0 A, 0.055 Ω@4.5V, SOT-23F
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -4.0 A, 0.055 Ω@4.5V, SOT-23F
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -4.0 A, 0.055 Ω@4.5V, SOT-23F
| Part | Current - Continuous Drain (Id) @ 25°C | Qualification | Grade | FET Type | Vgs (Max) [Max] | Mounting Type | Supplier Device Package | Package / Case | Operating Temperature | Technology | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 4 A | AEC-Q101 | Automotive | P-Channel | -8 V 6 V | Surface Mount | SOT-23F | SOT-23-3 Flat Leads | 150 °C | MOSFET (Metal Oxide) | 1 W | 10.4 nC | 20 V | 1 V | 1.5 V 4.5 V | 55 mOhm | 630 pF |
Toshiba Semiconductor and Storage | 4 A | P-Channel | -8 V 6 V | Surface Mount | SOT-23F | SOT-23-3 Flat Leads | 150 °C | MOSFET (Metal Oxide) | 1 W | 10.4 nC | 20 V | 1 V | 1.5 V 4.5 V | 55 mOhm | 630 pF |