Discrete Semiconductor Products

SIS435DNT-T1-GE3

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MOSFET P-CH 20V 30A PPAK1212-8

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Discrete Semiconductor Products

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MOSFET P-CH 20V 30A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIS435DNT-T1-GE3

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	180 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	39 W, 3.7 W
Rds On (Max) @ Id, Vgs	5.4 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	900 mV

Part	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SIS435DNT-T1-GE3	20 V	MOSFET (Metal Oxide)	8 V	PowerPAK® 1212-8	900 mV	5.4 mOhm	PowerPAK® 1212-8	5700 pF	1.8 V 4.5 V	-55 °C	150 °C	180 nC	3.7 W 39 W	Surface Mount	P-Channel	30 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 30A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources