SIS435 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 20V 30A PPAK1212-8
| Part | Drain to Source Voltage (Vdss) | Technology | Vgs (Max) | Supplier Device Package | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Mounting Type | FET Type | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 20 V | MOSFET (Metal Oxide) | 8 V | PowerPAK® 1212-8 | 900 mV | 5.4 mOhm | PowerPAK® 1212-8 | 5700 pF | 1.8 V 4.5 V | -55 °C | 150 °C | 180 nC | 3.7 W 39 W | Surface Mount | P-Channel | 30 A |