Discrete Semiconductor Products

SIR846BDP-T1-RE3

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MOSFET N-CH 100V 16.1A/65.8 PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 100V 16.1A/65.8 PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIR846BDP-T1-RE3

Current - Continuous Drain (Id) @ 25°C	65.8, 16.1 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	52 nC
Input Capacitance (Ciss) (Max) @ Vds	2440 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	5 W, 83.3 W
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]
Vishay General Semiconductor - Diodes Division SIR846ADP-T1-RE3	100 V	6 V 10 V	PowerPAK® SO-8	20 V	66 nC	-55 °C	150 °C	N-Channel	2350 pF	Surface Mount	3 V	MOSFET (Metal Oxide)	7.8 mOhm	83 W	60 A	PowerPAK® SO-8
Vishay General Semiconductor - Diodes Division SIR846BDP-T1-RE3	100 V		PowerPAK® SO-8	20 V	52 nC	-55 °C	150 °C	N-Channel	2440 pF	Surface Mount	4 V	MOSFET (Metal Oxide)	8 mOhm	5 W 83.3 W	16.1 A 65.8	PowerPAK® SO-8	10 V	7.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 16.1A (Ta), 65.8 (Tc) 5W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources