SIR846 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N-CH 100V 60A PPAK SO-8
| Part | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Vgs(th) (Max) @ Id | Technology | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 100 V | 6 V 10 V | PowerPAK® SO-8 | 20 V | 66 nC | -55 °C | 150 °C | N-Channel | 2350 pF | Surface Mount | 3 V | MOSFET (Metal Oxide) | 7.8 mOhm | 83 W | 60 A | PowerPAK® SO-8 | ||
 Vishay General Semiconductor - Diodes Division | 100 V | PowerPAK® SO-8 | 20 V | 52 nC | -55 °C | 150 °C | N-Channel | 2440 pF | Surface Mount | 4 V | MOSFET (Metal Oxide) | 8 mOhm | 5 W 83.3 W | 16.1 A 65.8 | PowerPAK® SO-8 | 10 V | 7.5 V |