STB31N65M5
ActiveN-CHANNEL 650 V, 0.124 OHM TYP., 22 A MDMESH M5 POWER MOSFET IN D2PAK PACKAGE
STB31N65M5
ActiveN-CHANNEL 650 V, 0.124 OHM TYP., 22 A MDMESH M5 POWER MOSFET IN D2PAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STB31N65M5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 22 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1865 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 150 W |
| Rds On (Max) @ Id, Vgs | 148 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 4.15 | |
| Digi-Reel® | 1 | $ 4.15 | ||
| N/A | 0 | $ 1.84 | ||
| Tape & Reel (TR) | 1000 | $ 2.15 | ||
| 2000 | $ 2.02 | |||
| 5000 | $ 1.94 | |||
Description
General part information
STB31N65M5 Series
These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.Worldwide best RDS(on) * areaHigher VDSSrating and high dv/dt capabilityExcellent switching performance100% avalanche tested
Documents
Technical documentation and resources