Specification	FGH60N60SFDTU

Current - Collector (Ic) (Max)	120 A
Current - Collector Pulsed (Icm)	180 A
Gate Charge	198 nC
IGBT Type	Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	378 W
Reverse Recovery Time (trr)	47 ns
Supplier Device Package	TO-247-3
Switching Energy	1.79 mJ, 670 µJ
Td (on/off) @ 25°C	22 ns, 134 ns
Test Condition	5 Ohm, 15 V, 60 A, 400 V
Vce(on) (Max) @ Vge, Ic	2.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

FGH60N60SM_F085 Series

IGBT, 600V, 60A, 1.8V, TO-247<BR>Field Stop

Part	Vce(on) (Max) @ Vge, Ic	Mounting Type	Gate Charge	Qualification	Voltage - Collector Emitter Breakdown (Max) [Max]	Test Condition	Grade	Current - Collector (Ic) (Max)	IGBT Type	Supplier Device Package	Power - Max [Max]	Switching Energy	Current - Collector Pulsed (Icm)	Reverse Recovery Time (trr)	Package / Case	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor FGH60N60SMD-F085	2.5 V	Through Hole	280 nC	AEC-Q101	600 V	3 Ohm 15 V 60 A 400 V	Automotive	120 A	Field Stop	TO-247-3	600 W	1.59 mJ 390 µJ	180 A	42 ns	TO-247-3	22 ns	116 ns	-55 °C	175 ░C
ON Semiconductor FGH60N60SFDTU	2.9 V	Through Hole	198 nC		600 V	5 Ohm 15 V 60 A 400 V		120 A	Field Stop	TO-247-3	378 W	1.79 mJ 670 µJ	180 A	47 ns	TO-247-3	22 ns 134 ns		-55 °C	150 °C
ON Semiconductor FGH60N6S2	2.5 V	Through Hole	140 nC		600 V	3 Ohm 15 V 40 A 390 V				TO-247-3	625 W	310 µJ 400 µJ	320 A		TO-247-3	18 ns 70 ns		-55 °C	150 °C	75 A
ON Semiconductor FGH60N60SMD	2.5 V	Through Hole	189 nC		600 V	3 Ohm 15 V 60 A 400 V		120 A	Field Stop	TO-247-3	600 W	1.26 mJ 450 µJ	180 A	39 ns	TO-247-3			-55 °C	175 ░C		18 ns 104 ns
ON Semiconductor FGH60T65SHD-F155	2.1 V	Through Hole	102 nC			6 Ohm 15 V 60 A 400 V		120 A	Trench Field Stop	TO-247-3	349 W	1.69 mJ 630 µJ	180 A	34.6 ns	TO-247-3			-55 °C	175 ░C		26 ns 87 ns	650 V
ON Semiconductor FGH60N60UFDTU-F085	2.9 V	Through Hole	192 nC	AEC-Q101	600 V	5 Ohm 15 V 60 A 400 V	Automotive	120 A	Field Stop	TO-247-3	298 W	2.47 mJ 810 µJ	180 A	76 ns	TO-247-3			-55 °C	150 °C		29 ns 138 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FGH60N60SM_F085 Series

Using novel field stop IGBT technology, ON Semiconductor's new series of field stop 3rdgeneration IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.