Discrete Semiconductor Products
FGH60N60UFDTU-F085
ObsoleteON Semiconductor
IGBT, 600V, 60A, 1.8V, TO-247<BR>FIELD STOP
Discrete Semiconductor Products
FGH60N60UFDTU-F085
ObsoleteON Semiconductor
IGBT, 600V, 60A, 1.8V, TO-247<BR>FIELD STOP
Technical Specifications
Parameters and characteristics for this part
| Specification | FGH60N60UFDTU-F085 |
|---|---|
| Current - Collector (Ic) (Max) | 120 A |
| Current - Collector Pulsed (Icm) | 180 A |
| Gate Charge | 192 nC |
| Grade | Automotive |
| IGBT Type | Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 298 W |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 76 ns |
| Supplier Device Package | TO-247-3 |
| Switching Energy | 810 µJ, 2.47 mJ |
| Td (on/off) @ 25°C | 29 ns, 138 ns |
| Test Condition | 5 Ohm, 15 V, 60 A, 400 V |
| Vce(on) (Max) @ Vge, Ic | 2.9 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
FGH60N60SM_F085 Series
IGBT, 600V, 60A, 1.8V, TO-247<BR>Field Stop
| Part | Vce(on) (Max) @ Vge, Ic | Mounting Type | Gate Charge | Qualification | Voltage - Collector Emitter Breakdown (Max) [Max] | Test Condition | Grade | Current - Collector (Ic) (Max) | IGBT Type | Supplier Device Package | Power - Max [Max] | Switching Energy | Current - Collector Pulsed (Icm) | Reverse Recovery Time (trr) | Package / Case | Td (on/off) @ 25°C | Td (on/off) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Current - Collector (Ic) (Max) [Max] | Td (on/off) @ 25°C | Voltage - Collector Emitter Breakdown (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 2.5 V | Through Hole | 280 nC | AEC-Q101 | 600 V | 3 Ohm 15 V 60 A 400 V | Automotive | 120 A | Field Stop | TO-247-3 | 600 W | 1.59 mJ 390 µJ | 180 A | 42 ns | TO-247-3 | 22 ns | 116 ns | -55 °C | 175 ░C | |||
ON Semiconductor | 2.9 V | Through Hole | 198 nC | 600 V | 5 Ohm 15 V 60 A 400 V | 120 A | Field Stop | TO-247-3 | 378 W | 1.79 mJ 670 µJ | 180 A | 47 ns | TO-247-3 | 22 ns 134 ns | -55 °C | 150 °C | ||||||
ON Semiconductor | 2.5 V | Through Hole | 140 nC | 600 V | 3 Ohm 15 V 40 A 390 V | TO-247-3 | 625 W | 310 µJ 400 µJ | 320 A | TO-247-3 | 18 ns 70 ns | -55 °C | 150 °C | 75 A | ||||||||
 ON Semiconductor | 2.5 V | Through Hole | 189 nC | 600 V | 3 Ohm 15 V 60 A 400 V | 120 A | Field Stop | TO-247-3 | 600 W | 1.26 mJ 450 µJ | 180 A | 39 ns | TO-247-3 | -55 °C | 175 ░C | 18 ns 104 ns | ||||||
 ON Semiconductor | 2.1 V | Through Hole | 102 nC | 6 Ohm 15 V 60 A 400 V | 120 A | Trench Field Stop | TO-247-3 | 349 W | 1.69 mJ 630 µJ | 180 A | 34.6 ns | TO-247-3 | -55 °C | 175 ░C | 26 ns 87 ns | 650 V | ||||||
ON Semiconductor | 2.9 V | Through Hole | 192 nC | AEC-Q101 | 600 V | 5 Ohm 15 V 60 A 400 V | Automotive | 120 A | Field Stop | TO-247-3 | 298 W | 2.47 mJ 810 µJ | 180 A | 76 ns | TO-247-3 | -55 °C | 150 °C | 29 ns 138 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
FGH60N60SM_F085 Series
Using novel field stop IGBT technology, ON Semiconductor's new series of field stop 3rdgeneration IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Documents
Technical documentation and resources