Specification	EFC3J018NUZTDG

Configuration	2 N-Channel (Dual) Common Drain
Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
FET Feature	2.5 V
Gate Charge (Qg) (Max) @ Vgs	75 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	WLCSP, 6-XFBGA
Power - Max [Max]	2.5 W
Rds On (Max) @ Id, Vgs	4.7 mOhm
Supplier Device Package	6-WLCSP (1.77x3.05)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.3 V

EFC3J018NUZ Series

Power MOSFET, Dual N-Channel, 20 V, 23 A, 4.7 mΩ

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature	FET Feature	FET Feature	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Package / Case	Mounting Type	Configuration	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor EFC3J018NUZTDG	6-WLCSP (1.77x3.05)	20 V	1.3 V	150 °C	Logic Level Gate	2.5 V	MOSFET (Metal Oxide)	23 A	4.7 mOhm	2.5 W	6-XFBGA WLCSP	Surface Mount	2 N-Channel (Dual) Common Drain	75 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.02
		10	$ 0.83
		100	$ 0.65
		500	$ 0.55
		1000	$ 0.45
		2000	$ 0.42
	Digi-Reel®	1	$ 1.02
		10	$ 0.83
		100	$ 0.65
		500	$ 0.55
		1000	$ 0.45
		2000	$ 0.42
	Tape & Reel (TR)	5000	$ 0.40
		10000	$ 0.38
		25000	$ 0.38
Newark	Each (Supplied on Full Reel)	3000	$ 0.50
		6000	$ 0.46
		12000	$ 0.41
		18000	$ 0.40
		30000	$ 0.39
ON Semiconductor	N/A	1	$ 0.41

Description

General part information

EFC3J018NUZ Series

This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-2 cells lithium-ion battery applications.

Documents

Technical documentation and resources

Package Drawing-567KS-WLCSP6 1.77x3.05

Package Drawing

Datasheet

Product Change Notice EN

Datasheet