EFC3J018NUZ Series

Power MOSFET, Dual N-Channel, 20 V, 23 A, 4.7 mΩ

Catalog

Power MOSFET, Dual N-Channel, 20 V, 23 A, 4.7 mΩ

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature	FET Feature	FET Feature	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Package / Case	Mounting Type	Configuration	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor EFC3J018NUZTDG	6-WLCSP (1.77x3.05)	20 V	1.3 V	150 °C	Logic Level Gate	2.5 V	MOSFET (Metal Oxide)	23 A	4.7 mOhm	2.5 W	6-XFBGA WLCSP	Surface Mount	2 N-Channel (Dual) Common Drain	75 nC

Catalog

Power MOSFET, Dual N-Channel, 20 V, 23 A, 4.7 mΩ

Key Features

• 2.5 V drive

• ESD Diode-Protected Gate

• Common-Drain Type

• RoHS compliance

• 2 kV ESD HBM

Description

This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-2 cells lithium-ion battery applications.