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UB and UBC 3-SMD No Lead
Discrete Semiconductor Products

JANTX2N2906AUBC/TR

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Microchip Technology

PNP SILICON SWITCHING -60V, -0.6A

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UB and UBC 3-SMD No Lead
Discrete Semiconductor Products

JANTX2N2906AUBC/TR

Active
Microchip Technology

PNP SILICON SWITCHING -60V, -0.6A

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTX2N2906AUBC/TR
Current - Collector (Ic) (Max) [Max]600 mA
Current - Collector Cutoff (Max) [Max]50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
GradeMilitary
Mounting TypeSurface Mount
Operating Temperature [Max]200 °C
Operating Temperature [Min]-65 ░C
Package / Case3-SMD, No Lead
Power - Max [Max]500 mW
QualificationMIL-PRF-19500/291
Supplier Device PackageUBC
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1.6 V
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 100$ 19.36
Microchip DirectN/A 1$ 20.85
100$ 19.36
500$ 18.61
1000$ 17.57

Description

General part information

JANTX2N2906AUBC-Transistor Series

This specification covers the performance requirements for PNP, silicon, switching 2N2906A and 2N2907A transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type, and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device, as specified in MIL-PRF-19500/291. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Documents

Technical documentation and resources

No documents available