STP11N65M2
ActiveN-CHANNEL 650 V, 0.60 OHM TYP., 7 A MDMESH M2 POWER MOSFET IN TO-220 PACKAGE
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STP11N65M2
ActiveN-CHANNEL 650 V, 0.60 OHM TYP., 7 A MDMESH M2 POWER MOSFET IN TO-220 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STP11N65M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 12.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 85 W |
| Rds On (Max) @ Id, Vgs | 670 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STP11 Series
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
Documents
Technical documentation and resources
