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DocumentsPackage Drawing-340CD-TO-247-3LD
Deep-Dive with AI
DocumentsPackage Drawing-340CD-TO-247-3LD
Technical Specifications
Parameters and characteristics for this part
| Specification | FGY75N60SMD |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 150 A |
| Current - Collector Pulsed (Icm) | 225 A |
| Gate Charge | 248 nC |
| IGBT Type | Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 Variant |
| Power - Max [Max] | 750 W |
| Reverse Recovery Time (trr) | 55 ns |
| Supplier Device Package | PowerTO-247-3 |
| Switching Energy | 770 µJ, 2.3 mJ |
| Td (on/off) @ 25°C | 136 ns |
| Td (on/off) @ 25°C | 24 ns |
| Test Condition | 3 Ohm, 400 V, 75 A, 15 V |
| Vce(on) (Max) @ Vge, Ic | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
FGY75N60SMD Series
Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2ndgeneration IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
Documents
Technical documentation and resources