FGY75N60SMD Series

IGBT, 600V, 75A, Field Stop

Catalog

IGBT, 600V, 75A, Field Stop

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Switching Energy	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Package / Case	Supplier Device Package	IGBT Type	Operating Temperature [Min]	Operating Temperature [Max]	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Gate Charge	Current - Collector Pulsed (Icm)	Mounting Type	Reverse Recovery Time (trr)	Test Condition
ON Semiconductor FGY75N60SMD	600 V	150 A	2.3 mJ 770 µJ	136 ns	24 ns	TO-247-3 Variant	PowerTO-247-3	Field Stop	-55 °C	175 ░C	2.5 V	750 W	248 nC	225 A	Through Hole	55 ns	3 Ohm 15 V 75 A 400 V

Catalog

IGBT, 600V, 75A, Field Stop

Key Features

• High current capability

• Low saturation voltage: VCE(sat)= 1.9V @ IC= 75A

• High input impedance

• Fast switching: EOFF=10uJ/A

• RoHS compliant

Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2ndgeneration IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.