Discrete Semiconductor Products

2SB1188T100R

NRND

TRANS GP BJT PNP 32V 2A 2000MW 4-PIN(3+TAB) MPT T/R

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Discrete Semiconductor Products

NRND

TRANS GP BJT PNP 32V 2A 2000MW 4-PIN(3+TAB) MPT T/R

Technical Specifications

Parameters and characteristics for this part

Specification	2SB1188T100R

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	180
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Supplier Device Package	MPT3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	800 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	32 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Package / Case	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Supplier Device Package	Transistor Type	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type
Rohm Semiconductor 2SB1188T100Q	32 V	150 °C	TO-243AA	800 mV	2 A	2 W	MPT3	PNP	1 µA	100 MHz	120	Surface Mount
Rohm Semiconductor 2SB1188T100P	32 V	150 °C	TO-243AA	800 mV	2 A	2 W	MPT3	PNP	1 µA	100 MHz	82 hFE	Surface Mount
Rohm Semiconductor 2SB1188T100R	32 V	150 °C	TO-243AA	800 mV	2 A	2 W	MPT3	PNP	1 µA	100 MHz	180	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A)

VCE(sat) = -0.5V (Typ.)

(IC/IB = -2A / -0.2A)

Technical documentation and resources