Discrete Semiconductor Products

2SB1188T100P

NRND

TRANS PNP 32V 2A MPT3

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Discrete Semiconductor Products

NRND

TRANS PNP 32V 2A MPT3

Technical Specifications

Parameters and characteristics for this part

Specification	2SB1188T100P

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	82 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Supplier Device Package	MPT3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	800 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	32 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Package / Case	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Supplier Device Package	Transistor Type	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type
Rohm Semiconductor 2SB1188T100Q	32 V	150 °C	TO-243AA	800 mV	2 A	2 W	MPT3	PNP	1 µA	100 MHz	120	Surface Mount
Rohm Semiconductor 2SB1188T100P	32 V	150 °C	TO-243AA	800 mV	2 A	2 W	MPT3	PNP	1 µA	100 MHz	82 hFE	Surface Mount
Rohm Semiconductor 2SB1188T100R	32 V	150 °C	TO-243AA	800 mV	2 A	2 W	MPT3	PNP	1 µA	100 MHz	180	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 32 V 2 A 100MHz 2 W Surface Mount MPT3

Technical documentation and resources