Discrete Semiconductor Products

IRFD9020

Obsolete

MOSFET P-CH 60V 1.6A 4DIP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 60V 1.6A 4DIP

Technical Specifications

Parameters and characteristics for this part

Specification	IRFD9020

Current - Continuous Drain (Id) @ 25°C	1.6 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	570 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	4-DIP (0.300", 7.62mm)
Power Dissipation (Max)	1.3 W
Rds On (Max) @ Id, Vgs	280 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Rds On (Max) @ Id, Vgs	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division IRFD9020	280 mOhm	20 V	Through Hole	19 nC	MOSFET (Metal Oxide)	4-DIP (0.300" 7.62mm)	1.3 W	60 V	1.6 A	570 pF	-55 °C	175 ░C	P-Channel	10 V
Vishay General Semiconductor - Diodes Division IRFD9020PBF	280 mOhm	20 V	Through Hole	19 nC	MOSFET (Metal Oxide)	4-DIP (0.300" 7.62mm)	1.3 W	60 V	1.6 A	570 pF	-55 °C	175 ░C	P-Channel	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 1.6A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

Technical documentation and resources