IRFD9020 Series

Catalog

MOSFET P-CH 60V 1.6A 4DIP

Part	Rds On (Max) @ Id, Vgs	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division IRFD9020	280 mOhm	20 V	Through Hole	19 nC	MOSFET (Metal Oxide)	4-DIP (0.300" 7.62mm)	1.3 W	60 V	1.6 A	570 pF	-55 °C	175 ░C	P-Channel	10 V
Vishay General Semiconductor - Diodes Division IRFD9020PBF	280 mOhm	20 V	Through Hole	19 nC	MOSFET (Metal Oxide)	4-DIP (0.300" 7.62mm)	1.3 W	60 V	1.6 A	570 pF	-55 °C	175 ░C	P-Channel	10 V