Discrete Semiconductor Products

SI9945BDY-T1-GE3

LTB

MOSFET 2N-CH 60V 5.3A 8SOIC

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Discrete Semiconductor Products

LTB

MOSFET 2N-CH 60V 5.3A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI9945BDY-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	5.3 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	20 nC
Input Capacitance (Ciss) (Max) @ Vds	665 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	3.1 W
Rds On (Max) @ Id, Vgs	58 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [y]	Package / Case [x]	FET Feature	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Configuration	Power - Max [Max]	Supplier Device Package
Vishay General Semiconductor - Diodes Division SI9945BDY-T1-GE3	MOSFET (Metal Oxide)	665 pF	Surface Mount	60 V	20 nC	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	Logic Level Gate	3 V	5.3 A	58 mOhm	2 N-Channel (Dual)	3.1 W	8-SOIC
Vishay General Semiconductor - Diodes Division SI9945AEY-T1	MOSFET (Metal Oxide)		Surface Mount	60 V	20 nC	-55 °C	175 ░C	8-SOIC	3.9 mm	0.154 in	Logic Level Gate	3 V	3.7 A	80 mOhm	2 N-Channel (Dual)	2.4 W	8-SOIC

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General part information

Mosfet Array 60V 5.3A 3.1W Surface Mount 8-SOIC

Technical documentation and resources