SI9945 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET 2N-CH 60V 5.3A 8SOIC
| Part | Technology | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Package / Case [y] | Package / Case [x] | FET Feature | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Configuration | Power - Max [Max] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 665 pF | Surface Mount | 60 V | 20 nC | -55 °C | 150 °C | 8-SOIC | 3.9 mm | 0.154 in | Logic Level Gate | 3 V | 5.3 A | 58 mOhm | 2 N-Channel (Dual) | 3.1 W | 8-SOIC |
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | Surface Mount | 60 V | 20 nC | -55 °C | 175 ░C | 8-SOIC | 3.9 mm | 0.154 in | Logic Level Gate | 3 V | 3.7 A | 80 mOhm | 2 N-Channel (Dual) | 2.4 W | 8-SOIC |