Discrete Semiconductor Products

JANSR2N5152U3

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Microchip Technology

TRANS GP BJT NPN 80V 2A 1000MW 3-PIN SMD-0.5 TRAY

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Discrete Semiconductor Products

JANSR2N5152U3

Active

Microchip Technology

TRANS GP BJT NPN 80V 2A 1000MW 3-PIN SMD-0.5 TRAY

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	JANSR2N5152U3

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Grade	Military
Mounting Type	Surface Mount
Package / Case	3-SMD, No Lead
Qualification	MIL-PRF-19500/544
Supplier Device Package	U3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic [Max]	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

JANTXV2N5152-Transistor Series

NPN Silicon Power 80V, 2A

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic [Max]	Transistor Type	Package / Case	Power - Max [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Grade	Qualification
Microchip Technology 2N5152L	80 V	1.5 V	NPN	TO-205AA TO-5-3 Metal Can	1 W	Through Hole	2 A	30	50 µA	TO-5AA
Microchip Technology JANSR2N5152U3	80 V	1.5 V	NPN	3-SMD No Lead		Surface Mount	2 A	30	1 mA	U3	Military	MIL-PRF-19500/544
Microchip Technology JAN2N5152	80 V	1.5 V	NPN	TO-205AD TO-39-3 Metal Can	1 W	Through Hole	2 A	30	50 µA	TO-39 (TO-205AD)	Military	MIL-PRF-19500/544
Microchip Technology 2N5152	80 V	1.5 V	NPN	TO-205AD TO-39-3 Metal Can	1 W	Through Hole	2 A	30	50 µA	TO-39
Microchip Technology JANTXV2N5152	80 V	1.5 V	NPN	TO-205AD TO-39-3 Metal Can	1 W	Through Hole	2 A	30	50 µA	TO-39 (TO-205AD)	Military	MIL-PRF-19500/544

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	50	$ 229.98

Description

General part information

JANTXV2N5152-Transistor Series

This specification covers the performance requirements for NPN, silicon, power, 2N5152 and 2N5154 transistors, complimentary to the 2N5151 and 2N5153 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/544. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels ("M", "D", "P", "L", "R", "F", "G", and "H") are provided for JANTXV and JANS product assurance levels.

Documents

Technical documentation and resources

No documents available