Discrete Semiconductor Products

FJL6920TU

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NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR

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Discrete Semiconductor Products

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NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	FJL6920TU

Current - Collector (Ic) (Max)	20 A
Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	5.5
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-264AA, TO-264-3
Power - Max [Max]	200 W
Supplier Device Package	TO-264-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	800 V

NPN Triple Diffused Planar Silicon Transistor

Part	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Package / Case	Transistor Type	Current - Collector (Ic) (Max)	Operating Temperature	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce
ON Semiconductor FJL6920TU	1 mA	TO-264-3	TO-264-3 TO-264AA	NPN	20 A	150 °C	200 W	800 V	Through Hole	3 V	5.5

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General part information

NPN Triple Diffused Planar Silicon Transistor

Technical documentation and resources