Catalog
NPN Triple Diffused Planar Silicon Transistor
Key Features
• High Voltage Color Display Horizontal Deflection Output
• High Collector-Base Breakdown Voltage: BVCBO= 1700 V
• Low Saturation Voltage: VCE(sat) = 3 V (Max.)
• For Color Monitor
NPN Triple Diffused Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
| Part | Current - Collector Cutoff (Max) [Max] | Supplier Device Package | Package / Case | Transistor Type | Current - Collector (Ic) (Max) | Operating Temperature | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Mounting Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce |
|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 1 mA | TO-264-3 | TO-264-3 TO-264AA | NPN | 20 A | 150 °C | 200 W | 800 V | Through Hole | 3 V | 5.5 |