Zenode.ai Logo
Beta
E-MELF PKG
Discrete Semiconductor Products

1N5416US/TR

Active
Microchip Technology

110V UFR,FRR SQ SMT TR B-BODY SQ. MELF ROHS COMPLIANT: YES

Deep-Dive with AI

Search across all available documentation for this part.

E-MELF PKG
Discrete Semiconductor Products

1N5416US/TR

Active
Microchip Technology

110V UFR,FRR SQ SMT TR B-BODY SQ. MELF ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification1N5416US/TR
Current - Average Rectified (Io)3 A
Current - Reverse Leakage @ Vr1 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-65 C
Package / CaseE, SQ-MELF
Reverse Recovery Time (trr)150 ns
Speed200 mA, 500 ns
Supplier Device PackageD-5B
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]100 V
Voltage - Forward (Vf) (Max) @ If1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 100$ 9.85
Microchip DirectN/A 1$ 10.61
NewarkEach 100$ 9.85
500$ 9.48

Description

General part information

1N5416US-TR-Rectifier Series

This "fast recovery" rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3.0 amp rated rectifiers for working peak reverse voltages from 50 to 600 volts are hermetically sealed with voidless-glass construction using an internal "Category 1" metallurgical bond. These devices are also available in axial-leaded packages for thru-hole mounting. Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.

Documents

Technical documentation and resources