BUK9M5R2-30EX

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MOSFET N-CH 30V 70A LFPAK33

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Discrete Semiconductor Products

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MOSFET N-CH 30V 70A LFPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9M5R2-30EX

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2467 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	79 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.1 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2.1 V

Part	Technology	Grade	Qualification	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Operating Temperature	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max) [Max]	Vgs (Max) [Min]	Power Dissipation (Max) [Max]
Freescale Semiconductor - NXP BUK9M5R2-30EX	MOSFET (Metal Oxide)	Automotive	AEC-Q101	79 W	4.1 mOhm	Surface Mount	22.5 nC	10 V	N-Channel	70 A	30 V	2.1 V	LFPAK33	-55 °C	175 ░C	2467 pF	10 V	5 V
Freescale Semiconductor - NXP BUK9M5R0-40HX	MOSFET (Metal Oxide)	Automotive	AEC-Q101			Surface Mount	28 nC		N-Channel	85 A	40 V		LFPAK33						175 °C	5 mOhm	10 V	16 V	-10 V	83 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 70A (Tc) 79W (Tc) Surface Mount LFPAK33

Technical documentation and resources