BUK9M5R0-40HX

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BUK9M5R0-40H - N-CHANNEL 40 V, 5.0 MΩ LOGIC LEVEL MOSFET IN LFPAK33@EN-US

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Discrete Semiconductor Products

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BUK9M5R0-40H - N-CHANNEL 40 V, 5.0 MΩ LOGIC LEVEL MOSFET IN LFPAK33@EN-US

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9M5R0-40HX

Current - Continuous Drain (Id) @ 25°C	85 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	175 °C
Power Dissipation (Max) [Max]	83 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	5 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	16 V
Vgs (Max) [Min]	-10 V

Part	Technology	Grade	Qualification	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Operating Temperature	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max) [Max]	Vgs (Max) [Min]	Power Dissipation (Max) [Max]
Freescale Semiconductor - NXP BUK9M5R2-30EX	MOSFET (Metal Oxide)	Automotive	AEC-Q101	79 W	4.1 mOhm	Surface Mount	22.5 nC	10 V	N-Channel	70 A	30 V	2.1 V	LFPAK33	-55 °C	175 ░C	2467 pF	10 V	5 V
Freescale Semiconductor - NXP BUK9M5R0-40HX	MOSFET (Metal Oxide)	Automotive	AEC-Q101			Surface Mount	28 nC		N-Channel	85 A	40 V		LFPAK33						175 °C	5 mOhm	10 V	16 V	-10 V	83 W

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